KyteLabs InfoBase - Semiconductor Data | Last modified: 2018-05-01 (19172) |
9 | Grenzwerte Maximum Ratings |
9.3 |
Feldeffekt-Transistoren Field-Effect Transistors |
9.3.3 | Selbstleitende Silizium-MOS-Kleinsignaltypen Silicon Small-Signal Depletion-Mode MOS Devices (Small-Signal MOSFETs) |
Alle Angaben sind absolute Grenzwerte, wenn nichts anderes angegeben ist.
Die Spannungs- und Stromangaben sind als Betrag aufzufassen.
Vorzeichen müssen entsprechend Betriebsart und Polarität des Halbleitermaterials gesetzt werden.
All values are absolute maximum ratings unless otherwise specified.
Voltage and current ratings are given as magnitude, where the sign has to be set according to operating condition and polarity of the semiconductor material.
UDS = 10 ... 20 V | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PT @TA | UDG | UDS | UGS | ID | RthJA | TJ | TSTG | Ref *? | ||||||
mW | °C | V | V | V | mA | K/W | °C | °C | ||||||
2SK241 | 200 | 25 | - | 20 | ±5.0 | 30 | 500 | 125 | –55... +125 |
Tos83 | ||||
PT @TA | UDG | UDS | UGS | ID | RthJA | TJ | TSTG | 17854 | ||||||
mW | °C | V | V | V | mA | K/W | °C | °C | ||||||
PT @TA | UDG | UDS | UGS | ID | RthJA | TJ | TA | Ref *? | ||||||
mW | °C | V | V | V | mA | K/W | °C | °C | ||||||
SM104 | 150 | 25 | 30 | 20 | –15.. +5.0 | 15 | 600 | 125 | 0... +70 |
Rft83 Fab80 |
||||
SM103 | 150 | 25 | 32 | 20 | –15.. +5.0 | 15 | 600 | 125 | 0... +70 |
Rft83 Fab80 |
||||
PT @TA | UDG | UDS | UGS | ID | RthJA | TJ | TA | 17866 | ||||||
mW | °C | V | V | V | mA | K/W | °C | °C | ||||||
PT @TA | UDS | UG2S | UG1S | ID | RthJA | TJ | TSTG | Ref *? | ||||||
mW | °C | V | V | V | mA | K/W | °C | °C | ||||||
3SK115 | 200 | 25 | 15 | ±8.0 | ±8.0 | 30 | 500 | 125 | –55.. +125 |
Tos83 | ||||
3SK114 | 200 | 25 | 15 | ±9.0 | ±9.0 | 30 | 500 | 125 | –55.. +125 |
Tos83 | ||||
3SK101 3SK102 |
200 | 25 | 20 | ±9.0 | ±9.0 | 30 | 500 | 125 | –55.. +125 |
Tos83 | ||||
PT @TA | UDS | UG2S | UG1S | ID | RthJA | TJ | TSTG | 17855 | ||||||
mW | °C | V | V | V | mA | K/W | °C | °C | ||||||
PT @TA | UDS | ID | IG2SM | IG1SM | RthJA | TJ | TSTG | Ref *? | ||||||
mW | °C | V | mA | mA | mA | K/W | °C | °C | ||||||
BF960 BF961 BF964 BF966 |
200 | 60 | 20 | 30 | ±10 | ±10 | <450 | 150 | –55.. +150 |
Tfk85 | ||||
BF963 | 200 | 60 | 20 | 50 | ±10 | ±10 | <450 | 150 | –55.. +150 |
Tfk85 | ||||
PT @TA | UDS | ID | IG2SM | IG1SM | RthJA | TJ | TSTG | 17856 | ||||||
mW | °C | V | mA | mA | mA | K/W | °C | °C | ||||||
PT @TA | UDSX | UGSS | ID | IG | RthJA | TJ | TSTG | Ref *? | ||||||
mW | °C | V | V | mA | mA | K/W | °C | °C | ||||||
2SK439 | 300 | 25 | 20 | ±5.0 | 30 | ±1.0 | 417 | 150 | –55... +150 |
Hit01 | ||||
2SK359 | 400 | 25 | 20 | ±5.0 | 30 | ±1.0 | 313 | 150 | –55... +150 |
Hit01 | ||||
PT @TA | UDSX | UGSS | ID | IG | RthJA | TJ | TSTG | 17908 | ||||||
mW | °C | V | V | mA | mA | K/W | °C | °C |
UDS = 200 ... 600 V | ||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PT @TA | UDGR @RGS | UDS | UGS | UGS (PK) |
ID | IDM | RthJA | TJ | TSTG | Ref *? | ||||||||
W | °C | V | kOhm | V | V | V | mA | A | K/W | °C | °C | |||||||
BSS149 | 1.0 | 25 | 200 | 20 | 200 | ±20 | - | 350 | 1.05 | <125 | –55...+150 | Inf99 | ||||||
BSS129 | 1.0 | 25 | 230 | 20 | 230 | - | ±20 | 150 | 0.6 | <125 | –55...+150 | Sie87 | ||||||
BSS129 | 1.0 | 25 | 240 | 20 | 240 | ±20 | - | 150 | 0.45 | <125 | –55...+150 | Inf99 | ||||||
BSS229 | 0.63 | 25 | 250 | 20 | 250 | ±20 | - | 70 | 0.21 | <200 | –55...+150 | Inf99 | ||||||
BSS135 | 1.0 | 25 | 600 | 20 | 600 | ±14 | ±20 | 80 | 0.24 | <125 | –55...+150 | Sie97 | ||||||
PT @TA | UDGR @RGS | UDS | UGS | UGS (PK) |
ID | IDM | RthJA | TJ | TSTG | 19172 | ||||||||
W | °C | V | kOhm | V | V | V | mA | A | K/W | °C | °C |
9.3.4 | Selbstleitende Silizium-MOS-Leistungstypen Silicon Depletion-Mode MOS Power Devices (Power MOSFETs) |
Alle Angaben sind absolute Grenzwerte, wenn nichts anderes angegeben ist.
Die Spannungs- und Stromangaben sind als Betrag aufzufassen.
Vorzeichen müssen entsprechend Betriebsart und Polarität des Halbleitermaterials gesetzt werden.
All values are absolute maximum ratings unless otherwise specified.
Voltage and current ratings are given as magnitude, where the sign has to be set according to operating condition and polarity of the semiconductor material.
IXTP 02N50D |
IXTP 01N100D |
||
---|---|---|---|
PT: @TC: |
25 25 |
25 25 |
W °C |
PT: @TA: |
1.1 25 |
1.1 25 |
W °C |
UDSV: UGS: UGS (PK): |
500 ±20 ±30 |
1000 ±20 ±30 |
V V V |
UDGR: @RGS: |
500 1.0 |
1000 1.0 |
V MOHM |
ID: IDM: @TC: |
0.2 0.8 25 |
0.1 0.4 25 |
A A °C |
RthJA: TJ: TSTG: TL: w: |
3.0 –55... +150 –55... +150 300 1.0 |
5.0 –55... +150 –55... +150 300 1.0 |
K/W °C °C °C g |
Ref *? | Ixy01 | 14447 |