| KyteLabs InfoBase - Semiconductor Data | Last modified: 2018-05-06 (19177) |
| 2 | Statische Kenndaten Static Characteristics |
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| 2.3 | Feldeffekt-Transistoren Field-Effect Transistors |
| 2.3.5 | Selbstleitende Silizium-MOS-Kleinsignaltypen im leitenden Zustand (eingeschaltet) Silicon Depletion-Mode MOS Devices (On-State) |
Die Spannungs- und Stromangaben sind als Betrag aufzufassen.
Vorzeichen müssen entsprechend Betriebsart und Polarität des Halbleitermaterials gesetzt werden.
Voltage and current ratings are given as magnitude, where the sign has to be set according to operating condition and polarity of the semiconductor material.
| R DS(ON) = 1.0 ... 10 OHM | |||||||||||||
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Rate | UGS (TH) |
@ID | UDS | Rate | R DS (ON) |
@ID | UGS | @TJ | Ref *? | |||
| V | mA | V | OHM | mA | V | °C | |||||||
| BSS149 BSP149 |
MIN | –1.8 | 1.0 | 3.0 | MIN | - | 50 | 0 | 25 | Inf99 | |||
| TYP | –1.2 | TYP | 2.5 | ||||||||||
| MAX | –0.7 | MAX | 3.5 | ||||||||||
| Rate | UGS (TH) |
@ID | UDS | Rate | R DS (ON) |
@ID | UGS | @TJ | 19177 | ||||
| V | mA | V | OHM | mA | V | °C | |||||||
| R DS(ON) = 10 ... 100 OHM | |||||||||||||
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Rate | UGS (TH) |
@ID | UDS | Rate | R DS (ON) |
@ID | UGS | @TJ | Ref *? | |||
| V | mA | V | OHM | mA | V | °C | |||||||
| BSS129 | TYP | –1.0 | 1.0 | 3.0 | TYP | - | 14 | 0 | 25 | Sie87 | |||
| MAX | –0.7 | MAX | 20 | ||||||||||
| BSS129 BSP129 |
MIN | –1.8 | 1.0 | 3.0 | MIN | - | 14 | 0 | 25 | Inf99 | |||
| TYP | –1.2 | TYP | 7.0 | ||||||||||
| MAX | –0.7 | MAX | 20 | ||||||||||
| BSS135 | MIN | –1.8 | 1.0 | 3.0 | MIN | - | 10 | 0 | 25 | Sie97 | |||
| TYP | –1.5 | TYP | 40 | ||||||||||
| MAX | –0.7 | MAX | 60 | ||||||||||
| BSS229 | MIN | –1.8 | 1.0 | 3.0 | MIN | - | 14 | 0 | 25 | Inf99 | |||
| TYP | –1.4 | TYP | 75 | ||||||||||
| MAX | –0.7 | MAX | 100 | ||||||||||
| Rate | UGS (TH) |
@ID | UDS | Rate | R DS (ON) |
@ID | UGS | @TJ | 19177 | ||||
| V | mA | V | OHM | mA | V | °C | |||||||
| 2.3.7 | Selbstleitende Silizium-MOS-Leistungstypen im leitenden Zustand (eingeschaltet) Silicon Depletion-Mode MOS Power Devices (On-State) |
Die Spannungs- und Stromangaben sind als Betrag aufzufassen.
Vorzeichen müssen entsprechend Betriebsart und Polarität des Halbleitermaterials gesetzt werden.
Voltage and current ratings are given as magnitude, where the sign has to be set according to operating condition and polarity of the semiconductor material.
| R DS(ON) = 20 ... 120 OHM | ||||||||||||||
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Rate | IDSS | @UDS | Rate | R DS (ON) |
@ID | UGS | @TJ | tP | tP/T | Ref *? | |||
| A | V | OHM | mA | V | °C | µs | % | |||||||
| IXTP02N50D | TYP | 0.25 | 25 | TYP | 20 | 50 | 0 | 25 | 300 | 2.0 | Ixy01 | |||
| MAX | - | MAX | 30 | |||||||||||
| IXTP01N100D | TYP | 0.25 | 50 | TYP | 20 | 90 | 0 | 25 | 300 | 2.0 | Ixy01 | |||
| MAX | - | MAX | 110 | |||||||||||
| Rate | ID | @UDS | Rate | R DS (ON) |
@ID | UGS | @TJ | tP | tP/T | 14448 | ||||
| A | V | OHM | mA | V | °C | µs | % | |||||||
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